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Silicon Carbide Ceramic Gall Technology

Silicon carbide ceramics have high hardness, high melting point, high wear resistance and corrosion resistance, as well as excellent oxidation resistance, high temperature strength, chemical stability, heat shock resistance, thermal conductivity and gas tightness. At present, the sintering methods of silicon carbide ceramics mainly include hot pressing sintering, pressureless sintering, reaction sintering, recrystallization sintering, microwave sintering, and discharge plasma sintering. Hot pressing sintering Hot press sintering is the process of placing silicon carbide powder into a mold and applying an axial pressure of 20-50mpa during heating, which helps to increase the contact, diffusion, and flow between particles, accelerating the rearrangement and densification of materials during the sintering process. The hot pressing sintering process is simple and the product density is high. Due to the low sintering temperature during hot pressing, the growth of grains is inhibited, resulting in fine sintered grains and high strength. However, the hot pressing sintering equipment is complex, the mold material requirements are high, the production process is strict, and it is only suitable for parts with simple shapes. It has high energy consumption, low production efficiency, and high production costs.


Silicon Carbide Ceramic Gall Technology



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